Proportioning plant for gaseous doping mixture preparation
GB8530824D0
Analytical autoclave
IT8220151D0
Reclaiming chloro:silane and hydrogen when mfg. silicon
DD160197A1
Process for the production of high-purity gallium
AU5951680A
Producing indium by vacuum melting and electrochemical refining
DD151078A1
Method of cleaning light-melting metals of influences
DD139215A1
Device for removing the crystal from the melt on an impf crystal
NL7806998A
Device for drawing a single crystal.
CH637698A5
Appliance for pulling a single crystal from a melt on a seed crystal
NL7704380A
Device for epitaxial growth of periodic structures - using gas phase from sources adjacent the substrate
NL7704343A
Semiconductor pressure sensor - using change in electrical resistance of multilayer structure of gallium arsenide-phosphide
NL7701539A
Formation of epitaxial layers of semiconductor material - uses deposition from gas phase, with selected proportions of solid constituents added, for evaporation and subsequent deposition
NL7701541A
Epitaxial growth of periodic semiconductor structures - from gaseous phase on revolving heated discs with substrates and sources
NL7700148A
Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support
AU8066775A
An electrolyzer for producing andre fining metals
GB1309702A
Method for measuring the flow rate of liquids and an apparatus for its realization
GB1248007A
Improvements in or relating to crystallization apparatus
