Thyristor arrangement, has external resistance and temperature zone each comprising temperature coefficients, where coefficients of external resistance are smaller than coefficients of resistance zone in specific temperature range
DE102004060210A1
Separation diffusion zone producing method for double-sided blocking power semiconductor component, involves producing trench that extends from side of semiconductor body up to maximum depth of body, and placing doping material into body
DE102004047359B3
Method and device for controlling and monitoring a soldering process
DE102004047357A1
Electrical arrangement and method for producing an electrical arrangement
DE102004046808B3
Connector and method of making a connector
DE102004043020B3
Bonding wire and bond connection
DE102004043019A1
module
DE102004042366B3
Semiconductor module comprises a substrate with one or more semiconductor components, and a housing connected to the substrate with an adhesive
DE102004042163A1
Thyristor, has short circuit zones, where ratio between sum of cross sectional surfaces of one zone in inner area and surface of area is greater than that between sum of surfaces of another zone in outer area to surface of outer area
DE102004041417A1
Electrical arrangement for microelectronics has component insulated from substrate by dielectric layer on conductive substrate
DE102004040524A1
Thyristor has direction specific resistance zone between ignition structure and main n emitter so that ignition pulse time is independent of the spreading direction
DE102004027186B3
Control circuit with MOSFET's and diodes is placed in orientation magnetic field and has crossed and cross-connected auxiliary emitter conductor and gate conductors with connectors in central portion
DE102004026596A1
Active semiconductor arrangement with at least one module plane and having a raised geometry with a conductive layer to make contact with an upper plane
DE102004019610A1
Soldering process for electronic components uses a solder vapour phase process
DE102004018468A1
Process for the structured application of a laminatable film to a substrate for a semiconductor module
DE102004018475A1
A power semiconductor device
DE102004018469B3
Power semiconductor circuit
DE102004006001B3
Power semiconductor component with field zone-field electrode structures has third semiconductor zone of first conductor type with common boundary surface with first semiconductor zone and electrically connected to field electrode
DE102004006002B3
Soi semiconductor device with increased dielectric strength
DE10352670A1
Electric component with equaliser of temperature caused mechanical stresses, connecting two part-elements with different length expansion coefficients, e.g. for optical components, i.e. glass plate connected to copper electrode etc
