KR20130093322A
|
|
Room-temperature operating set-synaptic circuit-based neuromorphic system
|
KR20130015255A
|
|
Room-temperature operating dual-gate single-electron device system
|
KR20130012890A
|
|
Room-temperature operating multi-gate single-electron device system
|
US2013221330A1
|
|
Multiple quantum dot device and a production method for the device
|
US2010330751A1
|
|
Single electron transistor operating at room temperature and manufacturing method for same
|
WO2009035268A2
|
|
Room temperature-operating single-electron device and the fabrication method thereof
|
KR20080032731A
|
|
Fabrication method of multiple-valued nor, nand logic circuits, using the single-electron transistor
|
KR20080032685A
|
|
Fabrication method of multi quantum dot nano device
|
KR20080030819A
|
|
Fabrication method for room temperature operating si-set
|
KR20070029862A
|
|
Mutiple valued sram
|
KR20070025427A
|
|
Fabrication method of self assembled nano structure with e-beam lithography
|
KR20060088797A
|
|
Spin qubit-based quantum computing logic gate
|
KR20050081125A
|
|
Two-qbit quantum computing gate
|
KR20050081124A
|
|
Silicon dual gate structure single electron nano device
|
KR20040072453A
|
|
Coulomb Oscillation Phase Controllable Single Electron Device
|
KR20040072454A
|
|
Single Electron Spin Controllable Nanodevice
|
KR20030062190A
|
|
Fabrication Method of Programmable Single Electron Device
|
KR20030061262A
|
|
Fabrication method of single electron device
|
KR20020090068A
|
|
Method of manufacturing a silicon-based single electron transistor logic device.
|
KR20020084881A
|
|
Method of manufacturing a silicon-based single electron transistor with in-plane side-gates
|