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CHEN XIANGDONG

Overview
  • Total Patents
    34
  • GoodIP Patent Rank
    231,650
About

CHEN XIANGDONG has a total of 34 patent applications. Its first patent ever was published in 2000. It filed its patents most often in United States, China and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors are ECO SEMICONDUCTORS LTD, LIAO CHIN-I and ZHOU WANSHUN.

Patent filings in countries

World map showing CHEN XIANGDONGs patent filings in countries

Patent filings per year

Chart showing CHEN XIANGDONGs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Chen Xiangdong 34
#2 Xia Wei 9
#3 Chen Henry Kuo-Shun 6
#4 Li Weipeng 4
#5 Yang Haining S 4
#6 Zhang Da 3
#7 Park Jae-Eun 3
#8 Park Dae-Gyu 3
#9 Wang Geng 3
#10 Deng Jie 2

Latest patents

Publication Filing date Title
CN109825572A A kind of kit and its detection method of detection and the susceptibility related gene polymorphism of propofol
CN102979113A House rectification method
CN102669802A Full-automatic trichosanthes kirilowii seed extractor
US2013193587A1 Semiconductor package having an interposer configured for magnetic signaling
US2013105942A1 FinFET devices
US2013087886A1 MOM capacitor having local interconnect metal plates and related method
US2013082347A1 One time programmable structure using a gate last high-K metal gate process
US2013082351A1 MIM capacitor having a local interconnect metal electrode and related structure
US2013062692A1 Half-FinFET semiconductor device and related method
US2012292708A1 Combined Substrate High-K Metal Gate Device and Oxide-Polysilicon Gate Device, and Process of Fabricating Same
US2012273894A1 High pressure deuterium treatment for semiconductor/high-K insulator interface
WO2011056391A2 High-drive current mosfet
US2012007145A1 Asymmetric channel MOSFET
US2011210388A1 Integrated native device without a halo implanted channel region and method for its fabrication
US2010200934A1 Field effect device including recessed and aligned germanium containing channel
US2011186934A1 Low mismatch semiconductor device and method for fabricating same
US2011180883A1 Method and structure to improve body effect and junction capacitance
US2011169096A1 Balancing NFET and PFET performance using straining layers
US2011089490A1 Method for fabricating a MOS transistor with reduced channel length variation and related structure
US2011037144A1 Method for fabricating a decoupling composite capacitor in a wafer and related structure