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CHAOJING TECH BEIJING CO LTD

Overview
  • Total Patents
    15
  • GoodIP Patent Rank
    113,244
  • Filing trend
    ⇩ 90.0%
About

CHAOJING TECH BEIJING CO LTD has a total of 15 patent applications. It decreased the IP activity by 90.0%. Its first patent ever was published in 2016. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, environmental technology and optics are BEIJING JIAZU TECH CO LTD, SUZHOU SUNA PHOTOELECTRIC CO LTD and SHENZHEN LAPLACE ENERGY TECH CO LTD.

Patent filings in countries

World map showing CHAOJING TECH BEIJING CO LTDs patent filings in countries
# Country Total Patents
#1 China 15

Patent filings per year

Chart showing CHAOJING TECH BEIJING CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Wang Shumin 14
#2 Liang Dan 6
#3 Lu Pengfei 5
#4 Zhang Fan 4
#5 Zhang Li 4
#6 Zhang Niwei 3
#7 Pan Wenwu 2
#8 Wang Chang 2
#9 Li Yaoyao 1
#10 Huang Wanglin 1

Latest patents

Publication Filing date Title
CN111463106A Method for realizing array pattern based on photoetching process
CN111426398A Multicolor large-area-array infrared detector and preparation method thereof
CN111424238A Thermal evaporation equipment for realizing low-temperature coating and low-melting-point film material
CN109449223A The laser and detector and preparation method of indium gallium nitrogen bismuth material and the use material
CN107768459A Laser and detector of a kind of indium phosphorus nitrogen bismuth material and preparation method thereof and use material and preparation method thereof
CN107565383A A kind of laser of indium phosphorus bismuth material and preparation method thereof and use material and preparation method thereof
CN107706297A A kind of thermoelectric conversion element based on β type telluride silicon materials and preparation method thereof
CN107623123A A kind of tin alkene material and preparation method thereof and the battery using the tin alkene material
CN107910388A The semi-conducting material and preparation method and all band photoelectric device of bismuth-containing nitrogen compound
CN107910401A A kind of preparation method of two classes superlattices infrared detector material
CN107910403A A kind of preparation method of quantum trap infrared detector part material
CN107910404A A kind of preparation method of cadmium-telluride-mercury infrared detector part material
CN107910402A A kind of indium-gallium-arsenide infrared detector material preparation method
CN107910750A A kind of preparation method of semiconductor laser material
CN108155254A Two-dimensional material flexible substrate structure, focal plane photodetector array and production method