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AKTSIONERNOE OBSHCHESTVO NPO ORION

Overview
  • Total Patents
    35
  • GoodIP Patent Rank
    44,909
  • Filing trend
    ⇩ 11.0%
About

AKTSIONERNOE OBSHCHESTVO NPO ORION has a total of 35 patent applications. It decreased the IP activity by 11.0%. Its first patent ever was published in 2015. It filed its patents most often in Russian Federation. Its main competitors in its focus markets semiconductors, environmental technology and measurement are SUZHOU OPS PLASMA TECHNOLOGY, SHIJIE XIANJIN JITI ELECTRIC C and SHANGHAI AEROSPACE MEASUREMENT CONTROL COMM RES INST.

Patent filings in countries

World map showing AKTSIONERNOE OBSHCHESTVO NPO ORIONs patent filings in countries
# Country Total Patents
#1 Russian Federation 35

Patent filings per year

Chart showing AKTSIONERNOE OBSHCHESTVO NPO ORIONs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Lopukhin Aleksej Alekseevich 7
#2 Klimanov Evgenij Alekseevich 7
#3 Patrashin Aleksandr Ivanovich 6
#4 Boltar Konstantin Olegovich 6
#5 Akimov Vladimir Mikhajlovich 6
#6 Vasileva Larisa Aleksandrovna 5
#7 Sednev Mikhail Vasilevich 5
#8 Kashuba Aleksej Sergeevich 4
#9 Khakuashev Pavel Evgenevich 4
#10 Nikonov Anton Viktorovich 4

Latest patents

Publication Filing date Title
RU2747075C1 Composition of mesa-etchant for indium antimonide orientation (100)
RU2730888C1 Method for manufacturing rigid probe heads
RU2739159C1 Reading device with time delay and accumulation of signals in digital form from multi-element infrared photodetectors
RU2716036C1 Method of producing a multi-site silicon pin-photosensitive element with low dark current level
RU2699347C1 Composition of mesa-etching agent for indium antimonid orientation (100)
RU2708553C1 Two-spectral photosensitive device
RU2703497C1 Multi-element photodetector
RU2696364C1 Method of measuring absolute spectral sensitivity of ir mpdd
RU2699239C1 Large-format scanning infrared matrix photodetector
RU2686882C1 Method to increase accuracy of docking quality control
RU2689972C1 Method of producing a silicon photodiode
RU2689973C1 Method of making photodetector multielement matrices
RU2678519C1 Two-spectral matrix photo detector manufacturing method
RU2679307C1 Method of installation of specified bbm irradiation
RU2676626C1 Method for determining dislocations of different type in cadmium mercury telluride structures with crystallographic orientation (310)
RU2670586C1 Method of increasing dynamic range in cells of ir photodetector array
RU2672982C1 Method for detection of inoperable photodiodes with improved interconnection in matrix photodetectors of ir-range spectrum
RU2654992C1 Method of manufacturing silicon photodyod
RU2655947C1 Infra-red large-format scanning array photodetector
RU2655953C1 Method for manufacturing microcontacts