Hemt type transistor built of layers of nitrides of group xiii chemical elements and method for its manufacture
PL371405A1
Method for manufacture of volumetric monocrystals by their growth on crystal nucleus
PL368781A1
Gallium containing nitride monocrystal and its application
PL368483A1
Monocrystals of nitride containing gallium and its application
PL357708A1
Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction
PL357699A1
Method of removing impurities from voluminal mono-crystalline nitride containing gallium
PL357703A1
Method of reducing impurity level in voluminal mono-crystalline nitride containing gallium
PL357698A1
Method of obtaining substrate from voluminal mono-crystalline nitride containing gallium
PL357702A1
Method of obtaining voluminal mono-crystalline nitride containing gallium
PL357704A1
Method of obtaining voluminal mono-crystalline nitride containing gallium
PL357705A1
Method of controlling crystal growth rate in a process of obtaining voluminal mono-crystalline nitride containing gallium
PL357701A1
Of obtaining voluminal mono-crystalline nitride containing gallium
