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AKTSIONERNOE OBSHCHESTVO NAUCHNO PROIZVODSTVENNOE PREDPRIYATIE PULSAR

Overview
  • Total Patents
    20
  • GoodIP Patent Rank
    84,720
  • Filing trend
    ⇧ 100.0%
About

AKTSIONERNOE OBSHCHESTVO NAUCHNO PROIZVODSTVENNOE PREDPRIYATIE PULSAR has a total of 20 patent applications. It increased the IP activity by 100.0%. Its first patent ever was published in 2016. It filed its patents most often in Russian Federation. Its main competitors in its focus markets telecommunications, semiconductors and basic communication technologies are MICROWAVE ASS, LIGANDER PER and NINOMIYA HIROSHI.

Patent filings in countries

World map showing AKTSIONERNOE OBSHCHESTVO NAUCHNO PROIZVODSTVENNOE PREDPRIYATIE PULSARs patent filings in countries
# Country Total Patents
#1 Russian Federation 20

Patent filings per year

Chart showing AKTSIONERNOE OBSHCHESTVO NAUCHNO PROIZVODSTVENNOE PREDPRIYATIE PULSARs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Ivanov Kirill Andreevich 5
#2 Ionov Vyacheslav Efimovich 5
#3 Adonin Aleksej Sergeevich 4
#4 Sidorov Vladimir Alekseevich 4
#5 Chuprunov Aleksej Gennadevich 4
#6 Pronin Andrej Anatolevich 3
#7 Gruzdov Vadim Vladimirovich 2
#8 Chernykh Aleksej Vladimirovich 2
#9 Minnebaev Vadim Minkhatovich 2
#10 Avetisyan Grachik Khachaturovich 2

Latest patents

Publication Filing date Title
RU2740029C1 Coaxial unipolar connector
RU2740028C1 Potential-free power module housing
RU2740006C1 Method of making metal-ceramic housings of to-220, to-247, to-254 type
RU2735366C1 Coaxial transition from symmetrical strip to waveguide of rectangular cross-section
RU2735360C1 Coaxial-waveguide broadband junction
RU2730381C1 Single 90-degree angle bending in n-plane in rectangular waveguide structure
RU2723475C1 Method of preparing substrate surface from aluminum nitride ceramic with holes formed by laser cutting, for thin-film metallisation
RU2735613C1 Unit of storage capacitors with heating
RU2718403C1 Angular bend of waveguide channel
RU2704149C1 Method of making boards based on aluminum nitride with transition holes
RU2721338C1 Method of determining substrate mounting quality during ultrasonic micro-welding
RU2688037C1 Hybrid photoelectric circuit assembly method with non-parallel mounting of elements
RU2711507C2 Digital device for generating envelope of output signals of transmitters of radar systems
RU2688035C1 Metal-ceramic housing of power semiconductor module based on high-heat-conducting ceramics and method of its manufacturing
RU2672159C1 Uhf switch with isolated electrodes
RU2653180C1 Multichannel microwave switching device with isolated electrodes
RU2650814C1 Structure of crystal of high-voltage semiconductor device, high-voltage integrated microcircuit (variants)
RU2640965C1 PSEUDOMORPHIC LIMITER OF POWER BASED ON HETEROSTRUCTURE AlGaN/InGaN
RU2640966C1 PSEUDOMORPHIC SWITCHING DEVICE BASED ON HETEROSTRUCTURE AlGaN/InGaN
RU2639579C2 Method of manufacturing of powerful silicon shf ldmos transistors with modernized gate node of elementary cells