ACCO SEMICONDUCTOR INC has a total of 35 patent applications. Its first patent ever was published in 2008. It filed its patents most often in United States, China and EPO (European Patent Office). Its main competitors in its focus markets telecommunications, basic communication technologies and semiconductors are AMPLIFICATION TECHNOLOGIES INC, WAVICS CO LTD and RFAXIS INC.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 8 | |
#2 | China | 7 | |
#3 | EPO (European Patent Office) | 5 | |
#4 | Republic of Korea | 5 | |
#5 | Taiwan | 5 | |
#6 | WIPO (World Intellectual Property Organization) | 4 | |
#7 | Japan | 1 |
# | Industry | |
---|---|---|
#1 | Telecommunications | |
#2 | Basic communication technologies | |
#3 | Semiconductors |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Amplifiers | |
#3 | Transmission | |
#4 | Code conversion | |
#5 | Waveguides | |
#6 | Antennas |
# | Name | Total Patents |
---|---|---|
#1 | Masliah Denis A | 15 |
#2 | Bracale Alexandre G | 9 |
#3 | Robbe Michel | 7 |
#4 | Doucet Stephan | 7 |
#5 | Huin Francis C | 7 |
#6 | Barroul Patrice J | 7 |
#7 | Malvasi Angelo | 6 |
#8 | Quack Sylvain | 6 |
#9 | Bracale Alexandre | 5 |
#10 | Masliah Denis | 5 |
Publication | Filing date | Title |
---|---|---|
CN104766887A | Electronic circuits including MOSFET and dual-gate JFET | |
EP2892079A2 | Electronic circuits including a MOSFET and a dual-gate JFET | |
US2015054038A1 | Electronic circuits including a MOSFET and a dual-gate JFET | |
US2013248945A1 | Electronic circuits including a MOSFET and a dual-gate JFET | |
CN102859888A | RF switches | |
US2010271133A1 | Electronic circuits including a MOSFET and a dual-gate JFET | |
US2011050345A1 | Linearization circuits and methods for power amplification | |
US2010245144A1 | Sigma-delta modulator including truncation and applications thereof | |
CN102983169A | Bigrid semiconductor device with high breakdown voltage | |
KR20100138924A | High breakdown voltage double-gate semiconductor device | |
US2009200581A1 | High breakdown voltage double-gate semiconductor device |