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ZHANG KUNLIANG

Overview
  • Total Patents
    20
About

ZHANG KUNLIANG has a total of 20 patent applications. Its first patent ever was published in 2007. It filed its patents most often in United States. Its main competitors in its focus markets audio-visual technology, machines and micro-structure and nano-technology are ZHAO TONG, READ RITE SMI KK and SAKURAI YOSHIFUMI.

Patent filings in countries

World map showing ZHANG KUNLIANGs patent filings in countries
# Country Total Patents
#1 United States 20

Patent filings per year

Chart showing ZHANG KUNLIANGs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Zhang Kunliang 20
#2 Li Min 19
#3 Zhou Yuchen 9
#4 Wang Hui-Chuan 4
#5 Zhao Tong 4
#6 Torng Chyu-Jiuh 3
#7 Zheng Min 3
#8 Oikawa Soichi 2
#9 Koui Katsuhiko 2
#10 Yamada Kenichiro 2

Latest patents

Publication Filing date Title
US2013082787A1 Spin injection layer robustness for microwave assisted magnetic recording
US2013084452A1 Very thin high coercivity film and process for making it
US2012205757A1 Pinning field in MR devices despite higher annealing temperature
US2012126905A1 Assisting FGL oscillations with perpendicular anisotropy for MAMR
US2012113540A1 Modified field generation layer for microwave assisted magnetic recording
US2011293967A1 Multilayer structure with high perpendicular anisotropy for device applications
US2011279921A1 CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording
US2011260270A1 MR enhancing layer (MREL) for spintronic devices
US2011096443A1 MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application
US2010330395A1 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization
US2010119874A1 Laminated high moment film for head applications
US2009269617A1 Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers
US2009251829A1 Seed layer for TMR or CPP-GMR sensor
US2009059441A1 CPP device with improved current confining structure and process