|
CN112117292A
|
|
Method for reducing dark current on surface of image sensor and image sensor
|
|
CN112289892A
|
|
Photoelectric detector and manufacturing method thereof
|
|
CN112117291A
|
|
Backside-illuminated charge domain global shutter image sensor and manufacturing method thereof
|
|
CN112255727A
|
|
End-face coupler and semiconductor device
|
|
CN112230339A
|
|
Grating coupler and preparation method thereof
|
|
CN112272061A
|
|
Analog front-end circuit of optical receiver
|
|
CN112255786A
|
|
Waveguide parameter extraction method and system, and virtual wafer establishment method and system
|
|
CN112068147A
|
|
Integrated chip and electronic device for target detection
|
|
CN112234053A
|
|
Wafer stacking method, wafer stacking structure and semiconductor package
|
|
CN112234945A
|
|
Distributed amplifier circuit, gain cell and electronic device
|
|
CN112202048A
|
|
External cavity laser, preparation method thereof and wavelength tuning method
|
|
CN112130352A
|
|
Optical switch
|
|
CN112180507A
|
|
Multi-waveguide cross device, waveguide chip and forming method thereof
|
|
CN112068244A
|
|
Athermal arrayed waveguide grating
|
|
CN112232504A
|
|
Photon neural network
|
|
CN112259624A
|
|
Image sensor and forming method thereof
|
|
CN112130130A
|
|
Silicon optical chip and laser radar system
|
|
CN112162366A
|
|
End face coupling device of optical fiber and waveguide chip
|
|
CN111952155A
|
|
Semiconductor device, method of manufacturing the same, and semiconductor integrated circuit
|
|
CN111785748A
|
|
Method and structure for reducing dark current of back-illuminated image sensor
|
