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US5319237A
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Power semiconductor component
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FR2691013A1
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Microwave power FET mfr. - by etching asymmetric gate recess in breakdown voltage controlling recess, to give transistors of high power and gain
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FR2689683A1
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Semiconductor device with complementary transistors
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FR2686734A1
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PROCESS FOR PRODUCING A TRANSISTOR
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FR2685819A1
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METHOD FOR PRODUCING A MICROFREQUENCY FIELD EFFECT TRANSISTOR
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FR2682546A1
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System for data transmission by exchange of UHF waves
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FR2680616A1
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System for exchanging data by microwave, with simultaneous transmission and reception.
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FR2680048A1
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Field-effect transistor with wide UHF pass band
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FR2671243A1
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Method of dephasing an electrical signal, and phase-baser based on this method.
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FR2670606A1
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Method for producing submicron grids on a semiconductor device.
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FR2670604A1
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Method for producing metallizations on a semiconductor device.
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FR2669475A1
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Modem for microwave badge with reflection amplifier.
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FR2669484A1
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DEVICE FOR ELECTROMAGNETIC WAVE TELECOMMUNICATIONS.
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FR2669481A1
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ELECTROMAGNETIC WAVE DATA EXCHANGE SYSTEM.
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FR2669479A1
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Circuit for increasing the information flow in a data exchange system.
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FR2665574A1
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METHOD FOR INTERCONNECTING BETWEEN AN INTEGRATED CIRCUIT AND A SUPPORT CIRCUIT, AND INTEGRATED CIRCUIT SUITABLE FOR THIS METHOD.
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FR2663155A1
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Process for producing a transistor grid.
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FR2660438A1
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Active two-way transmission antenna.
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FR2659494A1
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Power semiconductor component, the chip of which is mounted upper.
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FR2655772A1
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Antipollution device for vertical gas deposit building.
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