Learn more

SUMITOMO SITIX OF AMAGASAKI IN

Overview
  • Total Patents
    27
About

SUMITOMO SITIX OF AMAGASAKI IN has a total of 27 patent applications. Its first patent ever was published in 1990. It filed its patents most often in Japan, EPO (European Patent Office) and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets surface technology and coating, materials and metallurgy and electrical machinery and energy are ALADAR PACZ DR, NIPPON ITF INC and HEATBATH CORP.

Patent filings in countries

World map showing SUMITOMO SITIX OF AMAGASAKI INs patent filings in countries
# Country Total Patents
#1 Japan 20
#2 EPO (European Patent Office) 2
#3 WIPO (World Intellectual Property Organization) 2
#4 Canada 1
#5 China 1
#6 United States 1

Patent filings per year

Chart showing SUMITOMO SITIX OF AMAGASAKI INs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Ogasawara Tadashi 5
#2 Arimoto Nobuhiro 4
#3 Watanabe Munetoshi 4
#4 Kimura Shigetoshi 4
#5 Kaneko Kyojiro 4
#6 Sasaya Kenichi 4
#7 Onishi Masakazu 4
#8 Kizaki Shingo 3
#9 Fujita Makoto 3
#10 Nishioka Kazuo 3

Latest patents

Publication Filing date Title
WO0218669A1 Silicon monoxide vapor deposition material, process for producing the same, raw material for producing the same, and production apparatus
JP2002080989A Magnesium electrolytic bath
JP2002097096A Method for working charge rod for single crystal pulling-up
JP2002097567A Silicon monoxide for vapor deposition material and manufacturing method therefor
JP2002089444A Evacuating device and method for manufacturing active metal of high melting point
JP2002068725A Transportation method for polycrystalline silicon
JP2002069618A Production method for vapor-depositing material of silicon monoxide
JP2002066229A Sintered titanium filter and manufacturing method therefor
JP2002053922A High purity sponge titanium material and its production method
JP2001348291A Metal powder for igniting
JP2001262000A Powder pigment and method for treating powder
JP2001146499A Method for estimating diameter and temperature of silicon in production process of polycrystalline silicon and method of operation control using the same
JP2001133490A Method for measuring electrical resistivity of semiconductor
JP2001058118A Method for removing chloride
JP2001059677A Method of treating exhaust gas in polycrystalline silicon manufacturing process
JP2001040433A Producing apparatus for high melting point metal and production thereof
JP2001026481A Method for regenerating carbon member used for producing semiconductor silicon
JP2001021543A Flaw detection method of silicon lump
JP2001019593A Method for continuously casting silicon
JP2001019594A Method for continuously casting silicon