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ST MICROELECTRONICS TOURS SAS

Overview
  • Total Patents
    419
  • GoodIP Patent Rank
    6,521
  • Filing trend
    ⇧ 27.0%
About

ST MICROELECTRONICS TOURS SAS has a total of 419 patent applications. It increased the IP activity by 27.0%. Its first patent ever was published in 2007. It filed its patents most often in France, United States and China. Its main competitors in its focus markets electrical machinery and energy, semiconductors and environmental technology are ARAKI YASUSHI, PERTRIX UNION GES MIT BESCHRAE and JOO SEUNG KI.

Patent filings in countries

World map showing ST MICROELECTRONICS TOURS SASs patent filings in countries

Patent filings per year

Chart showing ST MICROELECTRONICS TOURS SASs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Menard Samuel 43
#2 Gonthier Laurent 29
#3 Boufnichel Mohamed 25
#4 Charley Sylvain 21
#5 Rivet Bertrand 20
#6 Benabdelaziz Ghafour 19
#7 Jarry Vincent 18
#8 Ory Olivier 17
#9 Ezzeddine Hilal 16
#10 Rouviere Mathieu 16

Latest patents

Publication Filing date Title
US2020127380A1 Antenna for mobile communication device
FR3101480A1 Insulating trenches for ESD circuits
US2020075445A1 Electronic chip package
FR3099887A1 Formation of a polymer
FR3099849A1 Protection device
FR3094838A1 Electrostatic discharge protection device
FR3094837A1 Electrostatic discharge protection device
FR3093592A1 Integrated circuit comprising a three-dimensional capacitor
FR3093230A1 Electronic chip housing
US2019237717A1 Microbattery assembly
US2019214985A1 Control of an anode-gate thyristor
US2019214476A1 Semiconductor triode
FR3091021A1 Vertical thyristor
FR3089679A1 Switching device and method of manufacturing such a device
US2019115915A1 Thyristor or triac control circuit
US2020106267A1 Low leakage transient overvoltage protection circuit using a series connected metal oxide varistor (MOV) and silicon controlled rectifier (SCR)
FR3086798A1 Diode structure
FR3086797A1 Electronic circuit comprising diodes
FR3086454A1 CAPACITOR
US2019043972A1 One-way switch with a gate referenced to the main back side electrode