| # | Country | Total Patents | |
|---|---|---|---|
| #1 | United States | 11 | |
| #2 | EPO (European Patent Office) | 10 | |
| #3 | Germany | 1 | |
| #4 | Netherlands | 1 |
| # | Industry | |
|---|---|---|
| #1 | Telecommunications | |
| #2 | Semiconductors | |
| #3 | Digital networks | |
| #4 | Surface technology and coating |
| # | Technology | |
|---|---|---|
| #1 | Transmission | |
| #2 | Semiconductor devices | |
| #3 | Digital information transmission | |
| #4 | Wireless communication networks | |
| #5 | Multiplex communication | |
| #6 | Coating metallic material |
| # | Name | Total Patents |
|---|---|---|
| #1 | Takagi Tasuku | 8 |
| #2 | Takeda Nobuo | 7 |
| #3 | Nishizawa Jun-Ichi | 5 |
| #4 | Nagasawa Zenichirou | 5 |
| #5 | Hoshikawa Toshiya | 4 |
| #6 | Dambayashi Toshikazu | 2 |
| #7 | Kishine Toshiyuki | 2 |
| #8 | Hirano Kiichi | 2 |
| #9 | Ohmori Hideaki | 2 |
| #10 | Sato Risaburo | 1 |
| Publication | Filing date | Title |
|---|---|---|
| US5475242A | Notched insulation gate static induction transistor integrated circuit | |
| US5227336A | Tungsten chemical vapor deposition method | |
| US5169795A | Method of manufacturing step cut type insulated gate SIT having low-resistance electrode | |
| EP0453591A1 | Radiocommunication system using time-division digital frames | |
| US5060029A | Step cut type insulated gate SIT having low-resistance electrode and method of manufacturing the same | |
| US5124985A | Radiocommunication system using time-division digital frames |