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SHARON ERAN

Overview
  • Total Patents
    46
About

SHARON ERAN has a total of 46 patent applications. Its first patent ever was published in 2005. It filed its patents most often in United States. Its main competitors in its focus markets computer technology, basic communication technologies and digital networks are DENSBITS TECHNOLOGIES LTD, LITSYN SIMON and YANG XUESHI.

Patent filings in countries

World map showing SHARON ERANs patent filings in countries
# Country Total Patents
#1 United States 46

Patent filings per year

Chart showing SHARON ERANs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Sharon Eran 46
#2 Alrod Idan 39
#3 Litsyn Simon 20
#4 Navon Ariel 3
#5 Li Yan 3
#6 Mokhlesi Nima 2
#7 Fainzilber Omer 2
#8 Lee Dana 1
#9 Ilani Ishai 1
#10 Shlick Mark 1

Latest patents

Publication Filing date Title
US2013055047A1 System and method of copying data
US2014003152A1 Methods for extending the effective voltage window of a memory cell
US2014006898A1 Flash memory with random partition
US2013294157A1 Reading data from multi-level cell memory
US2013166988A1 Multi-phase ECC encoding using algebraic codes
US2013163330A1 Mitigating variations arising from simultaneous multi-state sensing
US2013028021A1 Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US2013103891A1 Endurance enhancement coding of compressible data in flash memories
US2013101111A1 Method for scrambling shaped data
US2013024748A1 Systems and methods of storing data
US2013031431A1 Post-Write Read in Non-Volatile Memories Using Comparison of Data as Written in Binary and Multi-State Formats
US2013031447A1 Fast detection of convergence or divergence in iterative decoding
US2013031430A1 Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US2013031429A1 Data recovery for defective word lines during programming of non-volatile memory arrays
US2014013033A1 Optimized flash memory without dedicated parity area and with reduced array size
US2011258370A1 Multiple programming of flash memory without erase
US2011093652A1 Multi-bit-per-cell flash memory device with non-bijective mapping
US2012210082A1 Data coding using divisions of memory cell states
US2011235420A1 Simultaneous multi-state read or verify in non-volatile storage
US2010192042A1 Reading a flash memory by constrained decoding