Learn more

SHANGAHI HUALI MICROELECTRONICS CORP

Overview
  • Total Patents
    45
About

SHANGAHI HUALI MICROELECTRONICS CORP has a total of 45 patent applications. Its first patent ever was published in 2011. It filed its patents most often in China. Its main competitors in its focus markets optics are CHIME BALL TECHNOLOGY CO LTD, SANRITSU KIKAKU KK and TOYOTA MAX KK.

Patent filings in countries

World map showing SHANGAHI HUALI MICROELECTRONICS CORPs patent filings in countries
# Country Total Patents
#1 China 45

Patent filings per year

Chart showing SHANGAHI HUALI MICROELECTRONICS CORPs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Optics

Focus technologies

# Technology
#1 Photomechanical semiconductor production

Top inventors

# Name Total Patents
#1 Chang Fu 7
#2 Chen Yuwen 6
#3 Yuwen Chen 6
#4 Chunsheng Zheng 6
#5 Liang Zhang 5
#6 Youcun Hu 5
#7 Yu Liujiang 4
#8 Guo Mingsheng 3
#9 Zhou Jun 3
#10 Yunqing Dai 3

Latest patents

Publication Filing date Title
CN102437116A Technique integrating method capable of effectively reducing area of electrostatic discharge (ESD) protective circuit
CN102435547A Sensitive photoresist tolerance degree detection method and wafer defect detection method
CN102435154A Shape design of novel critical dimension monitoring structure
CN102437101A Improved method for integrating hard mask and porous material with low dielectric constant value
CN102435616A Monitoring method of stability of crystal edge detector
CN102437100A Method for simultaneously forming copper contact hole and first metal layer by dual damascene technique
CN102437098A Forming method of contact hole for reducing contact resistance
CN102436132A Method for optical proximity correction based on different substrates
CN102437097A Novel manufacturing method of contact hole
CN102437160A Static memory active region structure and SRAM (system random access memory) layout
CN102437157A Preparation method of CMOS (complementary metal oxide semiconductor) device capable of implementing multistage working voltage by single-thickness gate oxide layer
CN102437099A Forming method of contact hole structure for reducing resistance of contact hole
CN102437056A Method for parasitizing vertical plug and play (PNP) tube in complementary metal oxide semiconductor process
CN102437037A Method for effectively reducing water mark defects
CN102437163A CMOS (Complementary Metal Oxide Semiconductor) structure of wide forbidden band material on insulator and preparation method thereof
CN102436149A Method for confirming photoetching process window
CN102437164A Wide band gap complementary metal oxide semiconductor (CMOS) structure on insulator and preparation method thereof
CN102437117A Novel process for integrating silicide and metal foredielectric and forming structure thereof
CN102437129A Localized SOI (Silicon-On-Insulator) and GOI (Germanium On Insulator) device structure and process integrating method thereof
CN102437096A Manufacture method for reducing contact resistance of contact hole