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NORTHERN LIGHTS SEMICONDUCTOR

Overview
  • Total Patents
    145
About

NORTHERN LIGHTS SEMICONDUCTOR has a total of 145 patent applications. Its first patent ever was published in 2005. It filed its patents most often in United States, China and Taiwan. Its main competitors in its focus markets electrical machinery and energy, semiconductors and computer technology are EDGAR LILIENFELD JULIUS, IRWIN MICHAEL D and HEE SOLAR LLC.

Patent filings in countries

World map showing NORTHERN LIGHTS SEMICONDUCTORs patent filings in countries

Patent filings per year

Chart showing NORTHERN LIGHTS SEMICONDUCTORs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Lai James Chyi 115
#2 Agan Tom Allen 40
#3 Fong Kai Chun 17
#4 Agan Tom A 13
#5 Chyi Lai James 12
#6 Tom Allen Agan 10
#7 Allen Agan Tom 8
#8 James Chyi Lai 8
#9 Wilson Vicki 6
#10 Zhan Guoqing 6

Latest patents

Publication Filing date Title
TW201407915A Storage system for storing static electrical energy in atmosphere
TW201407916A Lightning energy storage system
TW201133523A A load system
CN101930981A Dynamic random access memory(DRAM) cell
TW201030627A A electrical device having a power source with a magnetic capacitor as an energy storage device
EP2264740A1 DRAM cell with magnetic capacitor
US2009289289A1 Dram cell with magnetic capacitor
US2009233381A1 Interconnect for a GMR memory cells and an underlying conductive layer
US2009257168A1 Apparatus for Storing Electrical Energy
US2010193906A1 Integrated Circuit Package for Magnetic Capacitor
GB0900432D0 A parallel plate magnetic capacitor and electric energy storage device
US2009295517A1 Expandable Energy Storage for Portable Electronic Devices
US2009278498A1 Energy storage system
KR20090114795A Apparatus to store electrical energy
KR20090114792A Apparatus and method to store electrical energy
US2009257150A1 Apparatus for storing electrical energy
TW200917465A DRAM cell with magnetic capacitor
DE102008005510A1 Solar Energy
US2009051386A1 Integrate circuit chip with magnetic devices
US2009046502A1 Metal Magnetic Memory Cell