| # | Country | Total Patents | |
|---|---|---|---|
| #1 | EPO (European Patent Office) | 5 | |
| #2 | Republic of Korea | 5 | |
| #3 | Sweden | 5 | |
| #4 | China | 4 | |
| #5 | WIPO (World Intellectual Property Organization) | 4 | |
| #6 | United States | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Electrical machinery and energy | |
| #3 | Micro-structure and nano-technology | |
| #4 | Computer technology | |
| #5 | Measurement | |
| #6 | Materials and metallurgy |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Magnets and transformers | |
| #3 | Nanostructure applications | |
| #4 | Static stores | |
| #5 | Measuring nuclear radiation | |
| #6 | Building materials |
| # | Name | Total Patents |
|---|---|---|
| #1 | Gupta Amita | 10 |
| #2 | Sharma Parmanand | 10 |
| #3 | Rao Venkat | 6 |
| #4 | Johansson Boerje | 5 |
| #5 | Ahuja Rajeev | 5 |
| #6 | Rao Kudumboor Venkat | 5 |
| #7 | Gustavsson Fredrik | 4 |
| #8 | Junno Bert | 3 |
| #9 | Staalemark Jan | 2 |
| #10 | Rajeev Rao Venkat Sharma Parma | 1 |
| Publication | Filing date | Title |
|---|---|---|
| WO2006112788A1 | Metal layer intersection doping | |
| CN101044415A | Detector for ionizing radiation | |
| KR20070073755A | Detector for ionizing radiation | |
| EP1756868A1 | Tunnel junction barrier layer comprising a diluted semiconductor with spin sensitivity | |
| KR20070038966A | Copper doped magnetic semiconductors | |
| EP1756855A1 | Manganese doped magnetic semiconductors | |
| KR20050110627A | Ferromagnetic material |