| # | Country | Total Patents | |
|---|---|---|---|
| #1 | WIPO (World Intellectual Property Organization) | 12 | |
| #2 | France | 9 | |
| #3 | EPO (European Patent Office) | 7 | |
| #4 | China | 6 | |
| #5 | Republic of Korea | 2 | |
| #6 | United States | 1 |
| # | Name | Total Patents |
|---|---|---|
| #1 | Ni Yang | 35 |
| #2 | Y Ni | 1 |
| #3 | Yang Ni | 1 |
| #4 | Zhu Yi Ming | 1 |
| Publication | Filing date | Title |
|---|---|---|
| FR3001578A1 | PHOTODIODE MATRIX WITH DOPED ZONE ABSORBING THE LOADS | |
| FR2997596A1 | STRUCTURE OF A CMOS ACTIVE PIXEL | |
| FR2986906A1 | IMPROVED LOAD TRANSFER ACTIVE PIXEL STRUCTURE | |
| FR2977982A1 | Ingaas photodiod matrix | |
| FR2943178A1 | MATRIX SENSOR WITH LOW CONSUMPTION | |
| FR2939919A1 | Matrix sensor | |
| FR2920590A1 | Pixel active cmos with very large dynamic operation | |
| EP1354360A1 | Photoelectric element with high operating dynamics |