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MO ZD SAPFIR AOOT

Overview
  • Total Patents
    16
About

MO ZD SAPFIR AOOT has a total of 16 patent applications. Its first patent ever was published in 2006. It filed its patents most often in Russian Federation. Its main competitors in its focus markets environmental technology are HANGZHOU IRON & STEEL GROUP CO, INST OF COTTON SCIENCES CHINES and FEDERAL NOE G BJUDZHETNOE UCHREZHDENIE NAUKI I OKTJABR SKOJINST GEOKHIMII I ANALITICHESKOJ KHIM IM V.

Patent filings in countries

World map showing MO ZD SAPFIR AOOTs patent filings in countries
# Country Total Patents
#1 Russian Federation 16

Patent filings per year

Chart showing MO ZD SAPFIR AOOTs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

Top inventors

# Name Total Patents
#1 Gindin Pavel Dmitrievich 16
#2 Karpov Vladimir Vladimirovich 11
#3 Astakhov Vladimir Petrovich 7
#4 Ezhov Viktor Petrovich 6
#5 Dolganin Jurij Nikitovich 5
#6 Kolganov Oleg Leonidovich 4
#7 Gribanov Aleksandr Aleksandrovich 4
#8 Solov Eva Galina Sergeevna 3
#9 Khitrova Ljudmila Mikhajlovna 2
#10 Davletshin Gumer Imamutdinovich 2

Latest patents

Publication Filing date Title
RU2495389C1 Measuring method of equivalent temperature
RU2490609C1 Method of testing pyrometers in working conditions
RU2461914C1 Planar photodiode on indium antimonide
RU2466168C1 Electroconductive adhesive
RU2457231C1 Adhesive epoxide compound
RU2449912C1 Method of controlling thermal control device protective glass fouling
RU2436697C1 Inlet assembly of floor-mounted chamber
RU2408952C1 Method of determining diffusion coefficient of dopant atoms in semiconductor
RU2389997C1 Recording device used when measuring radiation energy concentration function
RU2371810C1 Radiation receiver
RU2349985C1 PLANAR p-n JUNCTION PROCESS METHOD BASED ON HIGH-RESISTIVITY p-TYPE SILICON
RU2336597C1 METHOD OF PRODUCING CdHgTe-MESASTRUCTURE
RU2331950C1 METHOD OF PRODUCING PHOTODIODES ON CRYSTALS OF INDIUM ANTIMONID OF n-TYPE CONDUCTIVITY
RU2324259C1 Indium antimonide photodiode
RU2313853C1 Method for producing photodiodes on indium antimonide
RU2313854C1 Method for producing photodiodes on indium antimonide