|
US2019322376A1
|
|
High-efficiency, lightweight solar sheets
|
|
WO2019023281A1
|
|
Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes
|
|
WO2018187775A1
|
|
Back-contact thin film semiconductor device structures and methods for their production
|
|
WO2018013193A2
|
|
Integration of high-efficiency, lightweight solar sheets onto unmanned aerial vehicle for increased endurance
|
|
WO2014005102A1
|
|
High efficiency, lightweight, flexible solar sheets
|
|
US2013285440A1
|
|
Integration of high-efficiency, lightweight solar sheets onto unmanned aerial vehicle for increased endurance
|
|
WO2013049614A1
|
|
Light emitting diode fabricated by epitaxial lift-off
|
|
US2015255668A1
|
|
Thin film inp-based solar cells using epitaxial lift-off
|
|
US2010275969A1
|
|
Assembly techniques for solar cell arrays and solar cells formed therefrom
|
|
AU2010208225A1
|
|
High efficiency Group III-V compound semiconductor solar cell with oxidized window layer
|
|
AU2009319768A1
|
|
Solar cell with a backside via to contact the emitter layer
|
|
WO2009005824A1
|
|
Thin film iii-v compound solar cell
|
|
US2008230806A1
|
|
HBT and field effect transistor integration
|
|
US2006049485A1
|
|
High on-state breakdown heterojunction bipolar transistor
|
|
US2003025179A1
|
|
Graded base GaAsSb for high speed GaAs HBT
|
|
WO03009368A2
|
|
Low emitter resistance contacts to gaas high speed hbt
|
|
US2003025128A1
|
|
Low emitter resistance contacts to GaAs high speed HBT
|
|
WO03009396A2
|
|
Algaas or ingap low turn-on voltage gaas-based heterojunction bipolar transistor
|
