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MARUYAMA TOSHIRO

Overview
  • Total Patents
    21
About

MARUYAMA TOSHIRO has a total of 21 patent applications. Its first patent ever was published in 1988. It filed its patents most often in Japan and Taiwan. Its main competitors in its focus markets environmental technology and surface technology and coating are INST ELEKTROKHIMII URAL NAUCHN, HUANG XUANFEI and BARDINI NELSON GUILHERME.

Patent filings in countries

World map showing MARUYAMA TOSHIROs patent filings in countries
# Country Total Patents
#1 Japan 20
#2 Taiwan 1

Patent filings per year

Chart showing MARUYAMA TOSHIROs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Maruyama Toshiro 21
#2 Sato Tetsusaburo 1

Latest patents

Publication Filing date Title
JP2005142517A Condenser for solar battery for forming white diffused reflecting face at power generation
JP2001111091A CdS/CdTe SOLAR BATTERY WHERE A FLUORESCENT ACRYLIC PLATE FIXED BY BONDING PROCESS ON LIGHT-RECEIVING SURFACE
JP2001007377A Solar cell module having film of fluorescent substance formed on light receiving face
JPH11259860A Optical recording using metal and its oxidized film
JPH10247739A Solar cell with fluorescent material film formed on photodetecting surface thereof
JPH0726384A Chemical vapor phase growing method for tungsten oxide film
JPH0726383A Chemical vapor phase growing method for silicon oxide film
JPH0680413A Method for chemical vapor growth of silicon dioxide film
JPH0578843A Chemical vapor growth method of copper thin film
JPH04275996A Chemical vapor growth method
JPH04276078A Chemical vapor growth method
JPH04276076A Chemical vapor growth method
JPH04114918A Production of electroconductive tin oxide film
JPH0472068A Chemical vapor phase growth method
JPH01313332A Production of thin oxide superconducting film
JPS6433819A Manufacture of conductive oxide metal film
JPH01234569A Manufacture of magnesium oxide film
JPH01222061A Formation of thin silicon oxide film
JPH01222940A Plastic film-metallic oxide laminate
JPH01212219A Production of thin oxide superconducting film