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LEUCHTSTOFFWERK BREITUNGEN

Overview
  • Total Patents
    48
  • GoodIP Patent Rank
    183,274
About

LEUCHTSTOFFWERK BREITUNGEN has a total of 48 patent applications. Its first patent ever was published in 2000. It filed its patents most often in EPO (European Patent Office), WIPO (World Intellectual Property Organization) and Taiwan. Its main competitors in its focus markets basic materials chemistry, environmental technology and electrical machinery and energy are LIGHTSCAPE MATERIALS INC, JUESTEL THOMAS and HEBEI LEDPHOR OPTOELECTRONICS TECH CO LTD.

Patent filings per year

Chart showing LEUCHTSTOFFWERK BREITUNGENs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Roesler Sven 24
#2 Roesler Sylke 24
#3 Starick Detlef 24
#4 Duan Cheng-Jun 19
#5 Hintzen Hubertus Theresia 18
#6 Kempfert Wolfgang 10
#7 Li Yuan Qiang 8
#8 Dennstedt Rudolf 6
#9 Sven Roesler 5
#10 Detlef Starick 4

Latest patents

Publication Filing date Title
DE102013109313A1 Improved garnet phosphor and process for its preparation
EP2447338A1 Borophosphate phosphor and light source
DE102009044255A1 Alkaline earth metal silicate phosphors and methods for improving their long-term stability
CN101842461A Rare earth doped alkaline-earth silicon nitride phosphor, manufacture method and the radiation converting device that contains this phosphor
WO2009003988A1 Ce3+, eu2+ and mn2+ - activated alkaline earth silicon nitride phosphors and white-light emitting led
EP2100943A1 ABOS:M-based phosphors and light sources containing these phosphors
EP2058382A1 Method of manufacturing a rare-earth doped alkaline-earth silicon nitride phosphor, rare-earth doped alkaline-earth silicon nitride phosphor obtainable by such a method and radiation-emitting device comprising such a rare-earth doped alkaline-earth silicon nitride phosphor
EP2009078A1 Ce3+, Eu2+ -activated alkaline earth silicon nitride phosphors
EP2009077A1 Manganese-doped metal-silicon-nitrides phosphors
DE102005041153A1 Phosphorescent material, useful in white light-emitting diode, comprises an activation-doped lattice