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KWANSEI GAKUIN EDUCATIONAL FOUND

Overview
  • Total Patents
    236
  • GoodIP Patent Rank
    6,180
  • Filing trend
    ⇩ 23.0%
About

KWANSEI GAKUIN EDUCATIONAL FOUND has a total of 236 patent applications. It decreased the IP activity by 23.0%. Its first patent ever was published in 2014. It filed its patents most often in WIPO (World Intellectual Property Organization), Republic of Korea and China. Its main competitors in its focus markets semiconductors, organic fine chemistry and basic materials chemistry are UNIV KWANSEI GAKUIN, XIA CHUANJUN and UNIVERSAL DISPLAY CORP.

Patent filings per year

Chart showing KWANSEI GAKUIN EDUCATIONAL FOUNDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Hatakeyama Takuji 166
#2 Shiren Kazushi 66
#3 Sasada Yasuyuki 66
#4 Kaneko Tadaaki 56
#5 Yanai Motoki 46
#6 Kondo Yasuhiro 43
#7 Ikuta Toshiaki 36
#8 Yamaga Yuko 26
#9 Ashida Koji 25
#10 Ono Yohei 25

Latest patents

Publication Filing date Title
WO2021060367A1 Method for manufacturing sic substrate
WO2021060365A1 Method for producing semiconductor substrates and device for producing semiconductor substrates
WO2021060368A1 Sic single crystal manufacturing method, sic single crystal manufacturing device, and sic single crystal wafer
WO2021060366A1 Method of manufacturing sic semiconductor device and sic semiconductor device
WO2021060369A1 Sic substrate, sic substrate production method, sic semiconductor device, and sic semiconductor device production method
KR20210027179A Polycyclic aromatic compounds
WO2021025086A1 SiC SUBSTRATE PRODUCTION METHOD
WO2021025084A1 SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SiC INGOT PRODUCED BY GROWING SAID SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, AND SiC WAFER PRODUCED FROM SAID SiC INGOT AND SiC WAFER WITH EPITAXIAL FILM AND METHODS RESPECTIVELY FOR PRODUCING SAID SiC WAFER AND SAID SiC WAFER WITH EPITAXIAL FILM
WO2021025085A1 SiC SUBSTRATE, SiC EPITAXIAL SUBSTRATE, SiC INGOT AND PRODUCTION METHODS THEREOF
CN112210368A Composition for forming light-emitting layer, organic electroluminescent element, display device, and lighting device
WO2020251049A1 Polycyclic aromatic compound
KR20200140744A Amino-substituted polycyclic aromatic compounds
WO2020250700A1 Polycyclic aromatic compound
TW202044353A Method for manufacturing sic substrate, manufacturing device for same, and method for epitaxial growth
WO2020218558A1 Compound, material for organic device, composition for forming light-emitting layer, organic field-effect transistor, organic thin-film solar cell, organic electroluminescent element, display device, and illumination device
TW202103257A Method of manufacturing semiconductor substrate, manufacturing apparatus therefor, and epitaxial growth method
WO2020218484A1 Temperature distribution evaluation method, temperature distribution evaluation device, and soaking range evaluation method
KR20200125583A Cycloalkane condensed polycyclic aromatic compound
WO2020203516A1 Device for manufacturing semiconductor substrate comprising temperature gradient inversion means and method for manufacturing semiconductor substrate
WO2020203517A1 Semiconductor substrate manufacturing device applicable to large-diameter semiconductor substrate