|
CN111341851A
|
|
Fast recovery diode chip with combined terminal structure and manufacturing process
|
|
CN111430468A
|
|
Double-core isolation structure of double-cell packaged Schottky diode chip and manufacturing method
|
|
CN111415985A
|
|
PNP type low BVEBODarlington triode device structure and manufacturing method
|
|
CN111415997A
|
|
MOS structure groove diode device and manufacturing method thereof
|
|
CN110010677A
|
|
A kind of device architecture and its manufacturing method improving knot terminal extended structure triode reliability
|
|
CN110047944A
|
|
A kind of the TMBS device architecture and manufacturing method of low cost
|
|
CN110010703A
|
|
A kind of transient voltage suppression diode chip and manufacturing process of punch-through
|
|
CN108550529A
|
|
A kind of manufacturing method of high pressure VDMOS device
|
|
CN108470719A
|
|
A kind of compound TMBS devices and its manufacturing method
|
|
CN108493256A
|
|
CVD Schottky diodes chip and manufacturing process under a kind of no aluminium
|
|
CN108550524A
|
|
A kind of forming method of plane VDMOS polycrystalline grids
|
|
CN106981438A
|
|
Indium gallium alloy is used as the method for mercury thing in Fixed oxide charge test
|
|
CN106971942A
|
|
A kind of manufacture method of N+P structures fast recovery diode chip
|
|
CN101826472A
|
|
Multilayer metallizing method for composite material on back of chip
|
