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INNOVALIGHT INC

Overview
  • Total Patents
    125
  • GoodIP Patent Rank
    229,984
About

INNOVALIGHT INC has a total of 125 patent applications. Its first patent ever was published in 2004. It filed its patents most often in WIPO (World Intellectual Property Organization), United States and EPO (European Patent Office). Its main competitors in its focus markets environmental technology, semiconductors and materials and metallurgy are LEE HOWARD W H, NANTONG HUALONG MICROELECTRONICS CO LTD and LEIDHOLM CRAIG.

Patent filings per year

Chart showing INNOVALIGHT INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Kelman Maxim 55
#2 Poplavskyy Dmitry 47
#3 Vanheusden Karel 29
#4 Abbott Malcolm 29
#5 Antoniadis Homer 26
#6 Lemmi Francesco 22
#7 Rogojina Elena 22
#8 Terry Mason 22
#9 Jurbergs David 21
#10 Scardera Giuseppe 21

Latest patents

Publication Filing date Title
WO2012151422A1 Ceramic boron-containing doping paste and methods therefor
TW201237944A High fidelity doping paste and methods thereof
WO2012012166A1 Methods of forming a metal contact on a silicon substrate
WO2012012167A1 Methods of forming a floating junction on a solar cell with a particle masking layer
EP2529393A1 Methods of forming a multi-doped junction with silicon-containing particles
CN102668101A Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles
US2011028000A1 Methods of etching silicon-containing films on silicon substrates
KR20120055706A Methods for distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate
KR20120042904A Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles
US2011003466A1 Methods of forming a multi-doped junction with porous silicon
EP2419193A1 Methods and apparatus for the in situ collection of nucleated particles
US2010221903A1 Methods of forming a low resistance silicon-metal contact
US2011183504A1 Methods of forming a dual-doped emitter on a substrate with an inline diffusion apparatus
US2010136771A1 Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid
US2010136718A1 Methods and apparatus for aligning a set of patterns on a silicon substrate
WO2010050936A1 Methods of forming multi-doped junctions on a substrate
US7615393B1 Methods of forming multi-doped junctions on a substrate
US2009311875A1 Selective activation of hydrogen passivated silicon and germanium surfaces
EP2304778A1 Selective activation of hydrogen passivated silicon and germanium surfaces
EP2143145A2 Method of forming group iv semiconductor junctions using laser processing