|
US2019267810A1
|
|
HVDC/MVDC Systems and Methods with Low-Loss Fully-Bidirectional BJT Circuit Breakers
|
|
WO2019147372A2
|
|
Systems, subsystems, and methods with net energy metering
|
|
US2020111672A1
|
|
Systems and Methods for Bidirectional Device Fabrication
|
|
CA3081542A1
|
|
Anti-islanding systems and methods using harmonics injected in a rotation opposite the natural rotation
|
|
US2018130898A1
|
|
Ruggedized Symmetrically Bidirectional Bipolar Power Transistor
|
|
US2018109101A1
|
|
Ground Fault Detection Architectures, Systems, Circuits, and Methods
|
|
WO2017173157A1
|
|
Microgrid power architecture
|
|
EP3430723A1
|
|
Double-base-connected bipolar transistors with passive components preventing accidental turn-on
|
|
CN108886326A
|
|
Use the power Packet Switching Circuit of rows of two-way switch
|
|
US2017104478A1
|
|
Operation of double-base bipolar transistors with additional timing phases at switching transitions
|
|
CN108028603A
|
|
Operation of the additional timing stage to biradical bipolar transistor when being changed using switch
|
|
US2017047922A1
|
|
Bidirectional semiconductor switch with passive turnoff
|
|
WO2016187358A1
|
|
Synergistic applications of multi-on-mode bidirectional bipolar switch
|
|
US2016329418A1
|
|
Bidirectional bipolar transistors with two-surface cellular geometries
|
|
US2016329324A1
|
|
Bidirectional Bipolar Power Devices with Two-Surface Optimization of Striped Emitter/Collector Orientation
|
|
US2016322350A1
|
|
Geometry for a Bidirectional Bipolar Transistor with Trenches that Surround the Emitter/Collector Regions
|
|
US2016322256A1
|
|
Technique that Patterns Both Sides of a Thin Wafer to Fabricate Bi-Directional Devices
|
|
US2016269021A1
|
|
Collector-Side-Base-Driven Two-Base-Contact Bipolar Transistor with Reduced Series Resistance
|
|
US2016285388A1
|
|
Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
|
|
US2016268405A1
|
|
Thin-substrate double-base high-voltage bipolar transistors
|
