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CS226593B1
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Method of low-temperature alloying gallium arsenide
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CS225509B1
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Low-temperature formation of the single crystals of the gallium arsenide with the structure without mozaic blocks dislocations
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CS225497B1
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Low-temperature formation of single crystals of the gallium arsenide with structure without mosaic blocks and dislocations
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CS226975B1
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Method of and apparatus for low-temperature synthesis of gallium phosphide from original elements by passage through vapour phase
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CS226128B1
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Low temperature gallium arsenide dopping method
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CS225974B1
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Low temperature gallium arsenide doping method
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CS219127B1
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Method of transport of gallium arsenide in the vapour phase
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CS217546B1
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Method of gallium arsenide synthesis
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CS213543B1
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Method of making visible the fine structure on the monocrystals of semiconductor materials of the group a iii bv by etching
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CS212170B1
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Method of etching the galliumarsenide crystals for fixing the dislocation density
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CS214254B1
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Method of etching for determination of crystalline grains of gallium arsenide crystalls
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CS214252B1
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Method of lustrous etching of gallium arsenide crystalls
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CS189483B1
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Amorphous semiconducting alloy
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CS188642B1
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Amorphous semiconducting alloy
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CS189987B1
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Method of direct syntheseis of the binary and ternary substances at least one of them having high tension of vapours and device executing the same
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CS189964B1
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Method of cultivation of the monocrystals by means of transport in the wapour phase and device for performing the same
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CS179827B1
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Method and equipment for preparing amorphous semiconducting materials
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GB797793A
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A method of protecting ingots, blooms, billets and other ferrous metal forms against scaling
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