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GANO OPTOELECTRONICS INC

Overview
  • Total Patents
    14
  • GoodIP Patent Rank
    124,736
About

GANO OPTOELECTRONICS INC has a total of 14 patent applications. Its first patent ever was published in 2015. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, environmental technology and measurement are SUZHOU SUNA PHOTOELECTRIC CO LTD, RCT SOLUTIONS GMBH and SHIJIE XIANJIN JITI ELECTRIC C.

Patent filings in countries

World map showing GANO OPTOELECTRONICS INCs patent filings in countries
# Country Total Patents
#1 China 14

Patent filings per year

Chart showing GANO OPTOELECTRONICS INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Lu Hai 14
#2 Zhou Dong 14
#3 Qu Kaijun 11
#4 Li Lianghui 1
#5 Yang Sen 1
#6 Xu Yisong 1

Latest patents

Publication Filing date Title
CN110010592A A kind of multiband semiconductor photo detector
CN109244955A A kind of electric power network house wiring device
CN109270313A A kind of electric power network ammeter protective device
CN109301025A A kind of low breakdown voltage avalanche photodetector and preparation method thereof
CN109301024A A kind of novel p-i-n ultraviolet photodiode and preparation method thereof
CN109273553A A kind of AlGaN base p-i-n solar blind ultraviolet detector and preparation method
CN109256437A A kind of low-temperature bonding photodetector and preparation method thereof
CN109037385A A kind of ultraviolet avalanche photodiode
CN109244175A A kind of note Al ion avalanche photodiode and preparation method thereof
CN109166936A A kind of high resistant AlGaN base photoconductive switching device and preparation method thereof
CN109216493A A kind of p-i-n structure ultraviolet detector and preparation method thereof based on GaN material
CN109166935A A kind of Al component transition type solar blind ultraviolet detector and preparation method thereof
CN105047749A SiC Schottky ultraviolet detector with passivation layer having filtering function
CN104882510A Silicon carbide avalanche photodiode with novel small-dip-angle half mesa structure