Learn more

FEDERAL NOE GUP NPP PUL SAR

Overview
  • Total Patents
    31
About

FEDERAL NOE GUP NPP PUL SAR has a total of 31 patent applications. Its first patent ever was published in 2005. It filed its patents most often in Russian Federation. Its main competitors in its focus markets environmental technology are BENXI POWER SUPPLY CO LIAONING ELECTRIC POWER CO LTD, IZHORSKIJ ZAVOD and SAN CREST KK.

Patent filings in countries

World map showing FEDERAL NOE GUP NPP PUL SARs patent filings in countries
# Country Total Patents
#1 Russian Federation 31

Patent filings per year

Chart showing FEDERAL NOE GUP NPP PUL SARs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

Top inventors

# Name Total Patents
#1 Kolkovskij Jurij Vladimirovich 9
#2 Avetisjan Grachik Khachaturovich 8
#3 Minnebaev Vadim Minkhatovich 5
#4 Pekarchuk Tat Jana Nikolaevna 4
#5 Bachurin Viktor Vasil Evich 4
#6 Kurmachev Viktor Alekseevich 4
#7 Darofeev Aleksej Anatol Evich 4
#8 Kontsevoj Julij Abramovich 4
#9 Krymko Mikhail Mironovich 3
#10 Borodin Dmitrij Vladilenovich 3

Latest patents

Publication Filing date Title
RU2518498C1 Shf-transistor
RU2519055C1 High-power shf transistor
RU2519054C1 Shf high-power transistor with multilayer epitaxial structure
RU2517788C1 Bipolar shf transistor
RU2512742C1 Bipolar transistor
RU2501155C1 METHOD FOR POWER AMPLIFICATION ON GaN MICROWAVE TRANSISTORS AND PULSED MICROWAVE POWER AMPLIFIER
RU2510980C1 Active phase changer (versions)
RU2507633C1 Bipolar transistor based on heteroepitaxial structures and method of its realisation
RU2507634C1 Semiconductor device and method of its manufacturing
RU2475883C1 Method for diffusion of boron in silicon
RU2474044C1 Integrated driver
RU2442145C1 Method for structural inspection of semiconductor multilayer structure (variants)
RU2439744C1 Manufacturing method of shf ldmos transistors
RU2436224C1 Integral operational amplifier with current feedback
RU2436076C1 Method for control of defectiveness and resilient deformation in semiconductor heterostructures layers
RU2378741C1 Matrix charge-coupled photosensitive device
RU2380803C1 Module of active phased array
RU2368031C1 Method for manufacturing of semiconductor device
RU2364984C1 Manufacturing method of shf powerful field ldmos transistors
RU2373300C2 Composite material for metal-to-ceramic seals and method of obtaining thereof