Gruppe-iii-nitrid-halbleiterbauelement mit hoch p-leitfahiger schicht
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Semiconductor component
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Nitride semiconductor component and process for its production
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Production of highly conducting tear-free gallium nitride-based buffer layers used in production of illuminating diodes comprises using a group III nitride buffer layer with a silicon nitride layer, and doping with a donator
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Process for the epitaxial production of semiconductor nanostructures comprises adding halogens during layer growth and/or during interruptions of the layer growth of the nanostructure and/or the covering layer over
