Learn more

CN ELECT TECH NO 58 RES INST

Overview
  • Total Patents
    19
About

CN ELECT TECH NO 58 RES INST has a total of 19 patent applications. Its first patent ever was published in 2007. It filed its patents most often in China. Its main competitors in its focus markets environmental technology are SOORAMU KK, SUZHOU POWERLINK MICROELECTRONICS CO LTD and QINGDAO LIANMENG ELECTRONIC INSTR CO LTD.

Patent filings in countries

World map showing CN ELECT TECH NO 58 RES INSTs patent filings in countries
# Country Total Patents
#1 China 19

Patent filings per year

Chart showing CN ELECT TECH NO 58 RES INSTs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

Top inventors

# Name Total Patents
#1 Xiaoling Wang 4
#2 Qing Feng 4
#3 Ji Huicai 4
#4 Haiyan Tian 4
#5 Chen Zhenhai 4
#6 Xinjie Zhou 3
#7 Yu Zongguang 3
#8 Jing Luo 3
#9 Zhongjie Xue 3
#10 Huang Songren 3

Latest patents

Publication Filing date Title
CN102403232A Process for total dose radiation hardening of factory region
CN102427076A Gate oxide breakdown antifuse configuration unit structure applied to FPGA
CN102364687A Electrostatic discharge (ESD) protection structure between silicon-on-insulator (SOI)/CMOS integrated circuit power supply and ground
CN102412303A Layout reinforcement structure of large-head strip-shaped grid MOS (metal oxide semiconductor) tube with total-dose radiation effect resistance
CN102347367A Structure of radiation-resistant MOS (Metal Oxide Semiconductor) device based on partially-consumed type SOI (Silicon-On-Insulator) process
CN102315249A ESD (Electro-Static Discharge) resisting device structure of radiation-resistant EEPROM (Electrically Erasable Programmable Read-Only Memory) chip on thin epitaxial wafer
CN102394617A Dead zone enhanced protection high speed complementation switch drive circuit
CN102360852A Heavy-current planar transformer
CN102280998B Anti-irradiation charge pump circuit based on Dickson structure
CN102110692A Isolation structure of anti-radiation EEPROM (electrically erasable programmable read-only memory) array
CN101982882A Anti-radiation EEPROM memory array structure
CN101969267A Megahertz full-bridge soft-switching converter
CN101917195A High-precision and low-offset charge comparator circuit
CN101930982A FLOTOX structure-based radioresistant EEPROM storage unit structure
CN101860368A Negative-voltage effective transmission circuit suitable for standard CMOS process
CN101777916A Charge coupling assembly line A/D converter
CN101408488A Method for testing constant acceleration of microelectronic device
CN101355357A ESD protection structure for output buffer of SOI/CMOS integrated circuit
CN101358991A Method for detecting uniform acceleration of microelectronic device