CN112234143A
|
|
On-chip integrated IPD packaging structure, packaging method thereof and three-dimensional packaging structure
|
CN112275667A
|
|
Chip ESD diode process defect detection method based on difference comparison method
|
CN111934633A
|
|
High-power gain high-back-off efficiency power amplifier
|
CN111934632A
|
|
Ultra-wideband high-power amplifier
|
CN111934628A
|
|
Broadband high-linearity low-noise driving amplifier of 5G base station
|
CN111835299A
|
|
Variable gain amplifier with variable bandwidth
|
CN111865244A
|
|
Digital control variable gain amplifier
|
CN111740706A
|
|
Broadband high-linearity driving amplifier of 5G system
|
CN111682851A
|
|
Anti-mismatch broadband low-noise amplifier for 5G communication
|
CN111817670A
|
|
C-waveband ultra-wideband high-gain low-noise amplifier chip
|
CN111600553A
|
|
Microwave monolithic integration ultra-wideband power amplifier
|
CN111669138A
|
|
Millimeter wave broadband gain self-balancing low-power-consumption amplifier capable of switching power supply from top to bottom
|
CN111106804A
|
|
Millimeter wave ultra-wideband high-gain low-power-consumption low-noise amplifier chip circuit
|
CN110850531A
|
|
Multi-channel optical module integrated structure with high-efficiency heat dissipation capacity and high integration level
|
CN110620505A
|
|
Slope compensation circuit and voltage converter
|
CN110673686A
|
|
Low dropout regulator
|
CN110473789A
|
|
A kind of encapsulating structure and its design method three-dimensionally integrated for radio frequency system
|
CN110459528A
|
|
A kind of New-type radio-frequency transmission structure
|
CN109286389A
|
|
A kind of signal identification device and method for burst mode limiting amplifier
|
CN109324655A
|
|
A kind of High Precision Exponential temperature-compensating CMOS band-gap reference circuit
|