BHAT RAJARAM has a total of 13 patent applications. Its first patent ever was published in 2007. It filed its patents most often in United States and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets optics, micro-structure and nano-technology and semiconductors are TSUJI YUKIHIRO, RARING JAMES W and LEDENTSOV NIKOLAI NIKOLAEVICH.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 10 | |
#2 | WIPO (World Intellectual Property Organization) | 3 |
# | Industry | |
---|---|---|
#1 | Optics | |
#2 | Micro-structure and nano-technology | |
#3 | Semiconductors |
# | Technology | |
---|---|---|
#1 | Nanostructure applications | |
#2 | Devices using light amplification | |
#3 | Semiconductor devices |
# | Name | Total Patents |
---|---|---|
#1 | Bhat Rajaram | 13 |
#2 | Zah Chung-En | 9 |
#3 | Napierala Jerome | 6 |
#4 | Sizov Dmitry | 5 |
#5 | Sizov Dmitry Sergeevich | 2 |
#6 | Xi Jingqun | 2 |
#7 | Pinckney Linda Ruth | 2 |
#8 | Gadkaree Kishor Purushottam | 2 |
#9 | Sizov Dmitry S | 1 |
Publication | Filing date | Title |
---|---|---|
US2013322481A1 | Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets | |
US8379684B1 | Hole blocking layers in non-polar and semi-polar green light emitting devices | |
US2011292957A1 | GaN-based laser diodes with misfit dislocations displaced from the active region | |
US2011292958A1 | Enhanced planarity in GaN edge emitting lasers | |
US2011136280A1 | Growth methodology for light emitting semiconductor devices | |
US2011049469A1 | Enhanced P-Contacts For Light Emitting Devices | |
US2009101924A1 | Gallium nitride semiconductor device on SOI and process for making same |