Photoconductive antenna for generating or receiving terahertz radiation
DE102016009132A1
Time domain Terahertz spectrometer for spatially resolved measurement of transmission or reflection of objects
DE102013006473A1
Arrangement for the regeneration of optical pulses
DE102012005492A1
Passively quality-switched microchip laser used as pulsed light source in e.g. material treatment, has optical pumping device that is provided for pumping optical gain medium, for producing repetition frequency of optical laser pulse
DE102011114975B3
Passive quality-switched microchip-laser for use in material processing in nonlinear optics for e.g. laser distance measurement, has amplifier chip, where absorption of pump light is measured so that pump light is sufficient for switching
DE102011015384A1
Photoconductive antenna array for receiving pulsed terahertz radiation
DE102010032382A1
Fiber-coupled terahertz time domain spectrometer has pulse laser that uses transmitting antenna and receiving antenna, where both antennas are assigned with collimating terahertz optics in each case
DE102008031751B3
Photo-conductive antenna for material analysis in terahertz spectral range, has lens array comprising flat-convex lenses, whose focal points are found at surface between beginnings of spiral arms in center of antenna rows
DE102008013925B3
Saturable absorber mirror for use as mode coupler for pulse lasers, has mechanical distance piece provided for changing thickness of air layer, which is formed between saturable absorber layer system and dielectric Bragg-mirror
DE102006059573B3
Terahertz-radiation radiating or receiving arrangement, has photoconductive antenna with periodic structure having lens array, where focal points of individual lens of array are arranged at surface of semiconductor material between fingers
DE102006042642A1
Terahertz time-domain spectrometer
DE102006037470A1
Plane convex substrate lens for collimating high frequency electromagnetic rays, has static rough surface on side with convex profile, and antireflection coating layer that is provided on side with convex profile
DE102006012817A1
Photoconductive terahertz emitter
DE102006010301B3
Arrangement to emit and receive terahertz radiation has photoconductive antennae with gap and mode locked pulsed laser with multi-quantum well absorber mirror
DE102006010297B3
Photoconductive terahertz antenna for producing or receiving high frequency electromagnetic radiation in terahertz range, has top semiconductor layer system with optical thickness equal to quarter wavelength of laser pulse
DE102005049390B3
Saturable absorber mirror for e.g. regeneration of optical wavelength division multiplexing signal, has spacing layer with anti-reflection layer arranged on semiconductor layer, and dielectric layer with laterally non-constant thickness
DE102005014903A1
Lateral light-emitting polymer fiber for decorative purposes and for use in safety appliances, has light-emitting area formed with inhomogeneous structure and connected to light source
DE102005010695B3
Saturable absorber mirror for regenerating or modulating optical signals, has quantum wells arranged in cavity between front and rear mirrors in respective ranges of maxima of electric field strength of stationary wave field
DE10323472A1
Light emitting system for decorative effects in textiles has semiconductor diode light source with fiber electrical leads connected to the core of an optical fiber
