ADVANCED SILICON MATERIALS INC has a total of 28 patent applications. Its first patent ever was published in 1988. It filed its patents most often in United States, Canada and Germany. Its main competitors in its focus markets materials and metallurgy, surface technology and coating and chemical engineering are JIANGSU ZHONGNENG SILICON INDUSTRY TECH DEVELOPMENT CO LTD, ULTRAFERTIL SA and GOJKHRAKH ARON.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 10 | |
#2 | Canada | 5 | |
#3 | Germany | 3 | |
#4 | EPO (European Patent Office) | 3 | |
#5 | Japan | 3 | |
#6 | WIPO (World Intellectual Property Organization) | 2 | |
#7 | Italy | 1 | |
#8 | Republic of Korea | 1 |
# | Industry | |
---|---|---|
#1 | Materials and metallurgy | |
#2 | Surface technology and coating | |
#3 | Chemical engineering | |
#4 | Machines |
# | Technology | |
---|---|---|
#1 | Non-metallic elements | |
#2 | Coating metallic material | |
#3 | Chemical or physical processes | |
#4 | Single-crystal-growth | |
#5 | Separation | |
#6 | Unspecified technologies | |
#7 | Working stone |
# | Name | Total Patents |
---|---|---|
#1 | Izawa Junji | 5 |
#2 | Morihara Hiroshi | 5 |
#3 | Nagai Kenichi | 5 |
#4 | Yatsurugi Yoshifumi | 4 |
#5 | Prasad Ravi | 4 |
#6 | Lord Stephen M | 3 |
#7 | Van Slooten Richard A | 3 |
#8 | Milligan Robert J | 3 |
#9 | Keck David W | 3 |
#10 | Hsieh Shan-Tao | 3 |
Publication | Filing date | Title |
---|---|---|
WO9931013A1 | Chemical vapor deposition system for polycrystalline silicon rod production | |
JPH08169797A | Method and apparatus for preparation of polycrystalline silicon rod | |
US5810934A | Silicon deposition reactor apparatus | |
US5478396A | Production of high-purity polycrystalline silicon rod for semiconductor applications | |
JPH07109198A | Device and method for producing bar-like high-purity silicon for semiconductor | |
US5382419A | Production of high-purity polycrystalline silicon rod for semiconductor applications | |
KR950013069B1 | Graphite chuck having a hydrogen imprevious outer coating layer | |
US5165908A | Annular heated fluidized bed reactor | |
US5139762A | Fluidized bed for production of polycrystalline silicon | |
US4992245A | Annular heated fluidized bed reactor | |
US4941893A | Gas separation by semi-permeable membranes | |
CA1336937C | Fluidized bed for production of polycrystalline silicon |