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ADVANCED POWER ELECTRONICS CORP

Overview
  • Total Patents
    46
  • GoodIP Patent Rank
    212,683
About

ADVANCED POWER ELECTRONICS CORP has a total of 46 patent applications. Its first patent ever was published in 2003. It filed its patents most often in Japan, Taiwan and China. Its main competitors in its focus markets machine tools, machines and electrical machinery and energy are FU DING ELECTRONICAL TECH (JIASHAN) CO LTD, SEIWA SEIKI KK and INVO SPLINE INC.

Patent filings in countries

World map showing ADVANCED POWER ELECTRONICS CORPs patent filings in countries

Patent filings per year

Chart showing ADVANCED POWER ELECTRONICS CORPs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Jia Jian-Shi 21
#2 Sui Jing-Shuang 21
#3 Peng Yang-Mao 21
#4 Yang Ming-Lu 21
#5 Qu Jian 18
#6 Yu Jian-Min 18
#7 Zhang Wei-Chuan 18
#8 Zhang Tiang-En 18
#9 Chen Feng-Hua 18
#10 Xu Zhen-Guang 14

Latest patents

Publication Filing date Title
CN104113312A Grid voltage generating circuit
US2014292393A1 Gate voltage generating circuit
US2014240884A1 Over current protection circuit
TW201431286A Gate voltage generating circuit
TW201417434A Over current protection circuit
CN103187374A Power component encapsulation structure
TW201327747A Package structure of power device
TW201236109A Trench power MOSFET array and fabrication method thereof
TW201234430A Trench power mosfet array and fabrication method thereof
TW201232666A Trench power MOSFET and fabrication method thereof
WO2011016854A1 Soft switching using a lossless snubber circuit in a power converter
TW201135392A Buck converter
TWI234823B Structure of power semiconductor device for increasing the reliability
TWI245420B Power MOSFET device with mixing structure
TWI231593B Line skeleton of power MOS product having gate-source protection diode
TWI220794B Structure of power MOSFET with low on-state resistance
TWI220784B Line skeleton of power MOS product
TWI224853B Method of producing high power MOSFET with low pinch-off resistance
TW200511481A A power MOSFET with an isolation trench and method thereof
TWI221033B A method for manufacturing a trench power MOSFET with a schottky diode